@article {262,
	title = {Study of the electrical parameters degradation of {GaAs} sub-cells for triple junction space solar cells by computer simulation},
	journal = {Semiconductor Science and Technology},
	volume = {31},
	year = {2016},
	month = {oct},
	pages = {115020},
	abstract = {<p>In this paper, a theoretical study of the electrical parameters degradation of different n-type GaAs sub-cells for InGaP/GaAs/Ge triple junction solar cells irradiated with 1 and 5 MeV electrons has been performed by means of computer simulation. Effects of base carrier concentration upon the maximum power point, short-circuit current, open circuit voltage, diffusion current, recombination current and series resistance of these devices have been researched using the displacement damage dose method, the one-dimensional PC1D device modeling program and a home-made numerical code based on genetic algorithms. The radiative recombination lifetime, damage constant for minority-carrier lifetime and carrier removal rate models for GaAs sub-cells have been used in the simulations. An analytical model has been proposed, which is useful to describe the radiation-induced degradation of diffusion current, recombination current and series resistance. Results obtained in this work can be used to predict the radiation resistance of solar cells over a wide range of energies.</p>
},
	doi = {10.1088/0268-1242/31/11/115020},
	url = {https://doi.org/10.1088\%2F0268-1242\%2F31\%2F11\%2F115020},
	author = {Cappelletti, Marcelo and Casas, G and Morales, D and Hasperue, W and Peltzer y Blanc{\'a}, E}
}
